Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena

The paper addresses the gap between empirical DRAM read disturbance studies (RowHammer/RowPress) and device-level physical models, which fail to explain key observed bitflip behaviors. The authors systematically compare three fundamental metrics—bitflip directions, bitflip counts, and ACmin—against existing models, then run extensive TCAD simulations to reproduce real-chip phenomena. The simulations reveal updated error mechanisms and identify critical modeling parameters that determine whether results match hardware characterization, though the abstract does not disclose quantitative experimental results. This work provides a principled foundation for developing more accurate characterization methodologies and effective mitigations, directly impacting the security and reliability of DRAM-based systems.